Pulsed Laser Deposition of Nanostructured Indium-Tin-Oxide Film
Identifieur interne : 003A43 ( Main/Repository ); précédent : 003A42; suivant : 003A44Pulsed Laser Deposition of Nanostructured Indium-Tin-Oxide Film
Auteurs : RBID : Pascal:11-0029782Descripteurs français
- Pascal (Inist)
- Diode électroluminescente organique, Microscopie électronique balayage, Diffraction RX, Spectrométrie RX, Facteur transmission, Dépôt laser pulsé, Dépôt laser, Conductivité électrique, Spectre absorption, Température substrat, Nanostructure, Couche mince, Oxyde d'indium, Etain, Couche ITO, Verre, Microcristal, Spectre RX, Spectrométrie dispersive, Inclusion, Diode électroluminescente, YAG, Y3Al5O12, Substrat verre, 0130C, 4270, 8560J, 8560, 6855J, 8107, 8115F, 7361, Dispositif électroluminescent organique.
- Wicri :
- concept : Verre.
English descriptors
- KwdEn :
- Absorption spectra, Dispersive spectrometry, Electrical conductivity, Glass, ITO layers, Inclusions, Indium oxide, Laser deposition, Light emitting diodes, Microcrystal, Nanostructures, Organic light emitting diodes, Organic light-emitting devices, Pulsed laser deposition, Scanning electron microscopy, Substrat temperature, Thin films, Tin, Transmittance, X-ray spectra, X-ray spectroscopy, XRD.
Abstract
Effects of O2, N2, Ar and He on the formation of micro- and nanostructured indium tin oxide (ITO) thin films were investigated in pulsed Nd:YAG laser deposition on glass substrate. For O2 and Ar, ITO resistivity of ≤ 4 × 10-4 Ωcm and optical transmittance of > 90% were obtained with substrate temperature of 250 °C. For N2 and He, low ITO resisitivity could be obtained but with poor optical transmittance. SEM images show nano-structured ITO thin films for all gases, where dense, larger and highly oriented, microcrystalline structures were obtained for deposition in O2 and He, as revealed from the XRD lines. EDX results indicated the inclusion of Ar and N2 at the expense of reduced tin (Sn) content. When the ITO films were applied for fabrication of organic light emitting devices (OLED), only those deposited in Ar and O2 produced comparable performance to single-layer OLED fabricated on the commercial ITO.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Pulsed Laser Deposition of Nanostructured Indium-Tin-Oxide Film</title><author><name>THIAN KOK YONG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Engineering, Multimedia University</s1><s2>Cyberjaya, Selangor</s2><s3>MYS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Malaisie</country><wicri:noRegion>Cyberjaya, Selangor</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Konkoly Thege út 29-33</s1><s2>29-33, Budapest XII</s2><s3>HUN</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Hongrie</country><wicri:noRegion>29-33, Budapest XII</wicri:noRegion></affiliation></author><author><name>CHEN HON NEE</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Engineering, Multimedia University</s1><s2>Cyberjaya, Selangor</s2><s3>MYS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Malaisie</country><wicri:noRegion>Cyberjaya, Selangor</wicri:noRegion></affiliation></author><author><name>SEONG SHAN YAP</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Engineering, Multimedia University</s1><s2>Cyberjaya, Selangor</s2><s3>MYS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Malaisie</country><wicri:noRegion>Cyberjaya, Selangor</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, Michigan Technological University, 1400 Townsend Drive</s1><s2>Houghton, MI, 49931-1295</s2><s3>USA</s3><sZ>3 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Houghton, MI, 49931-1295</wicri:noRegion></affiliation></author><author><name>WEE ONG SIEW</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Engineering, Multimedia University</s1><s2>Cyberjaya, Selangor</s2><s3>MYS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Malaisie</country><wicri:noRegion>Cyberjaya, Selangor</wicri:noRegion></affiliation></author><author><name sortKey="Safran, Gy Rgy" uniqKey="Safran G">Gy Rgy Safran</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Konkoly Thege út 29-33</s1><s2>29-33, Budapest XII</s2><s3>HUN</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Hongrie</country><wicri:noRegion>29-33, Budapest XII</wicri:noRegion></affiliation></author><author><name>YOKE KIN YAP</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, Michigan Technological University, 1400 Townsend Drive</s1><s2>Houghton, MI, 49931-1295</s2><s3>USA</s3><sZ>3 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Houghton, MI, 49931-1295</wicri:noRegion></affiliation></author><author><name>TECK YONG TOU</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Engineering, Multimedia University</s1><s2>Cyberjaya, Selangor</s2><s3>MYS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Malaisie</country><wicri:noRegion>Cyberjaya, Selangor</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0029782</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 11-0029782 INIST</idno><idno type="RBID">Pascal:11-0029782</idno><idno type="wicri:Area/Main/Corpus">003834</idno><idno type="wicri:Area/Main/Repository">003A43</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term><term>Dispersive spectrometry</term><term>Electrical conductivity</term><term>Glass</term><term>ITO layers</term><term>Inclusions</term><term>Indium oxide</term><term>Laser deposition</term><term>Light emitting diodes</term><term>Microcrystal</term><term>Nanostructures</term><term>Organic light emitting diodes</term><term>Organic light-emitting devices</term><term>Pulsed laser deposition</term><term>Scanning electron microscopy</term><term>Substrat temperature</term><term>Thin films</term><term>Tin</term><term>Transmittance</term><term>X-ray spectra</term><term>X-ray spectroscopy</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Diode électroluminescente organique</term><term>Microscopie électronique balayage</term><term>Diffraction RX</term><term>Spectrométrie RX</term><term>Facteur transmission</term><term>Dépôt laser pulsé</term><term>Dépôt laser</term><term>Conductivité électrique</term><term>Spectre absorption</term><term>Température substrat</term><term>Nanostructure</term><term>Couche mince</term><term>Oxyde d'indium</term><term>Etain</term><term>Couche ITO</term><term>Verre</term><term>Microcristal</term><term>Spectre RX</term><term>Spectrométrie dispersive</term><term>Inclusion</term><term>Diode électroluminescente</term><term>YAG</term><term>Y3Al5O12</term><term>Substrat verre</term><term>0130C</term><term>4270</term><term>8560J</term><term>8560</term><term>6855J</term><term>8107</term><term>8115F</term><term>7361</term><term>Dispositif électroluminescent organique</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Verre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Effects of O<sub>2</sub>, N<sub>2</sub>, Ar and He on the formation of micro- and nanostructured indium tin oxide (ITO) thin films were investigated in pulsed Nd:YAG laser deposition on glass substrate. For O<sub>2</sub> and Ar, ITO resistivity of ≤ 4 × 10<sup>-4</sup> Ωcm and optical transmittance of > 90% were obtained with substrate temperature of 250 °C. For N<sub>2</sub> and He, low ITO resisitivity could be obtained but with poor optical transmittance. SEM images show nano-structured ITO thin films for all gases, where dense, larger and highly oriented, microcrystalline structures were obtained for deposition in O<sub>2</sub> and He, as revealed from the XRD lines. EDX results indicated the inclusion of Ar and N<sub>2</sub> at the expense of reduced tin (Sn) content. When the ITO films were applied for fabrication of organic light emitting devices (OLED), only those deposited in Ar and O<sub>2</sub> produced comparable performance to single-layer OLED fabricated on the commercial ITO.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA02 i1="01"><s0>PSISDG</s0></fA02><fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. Eng.</s0></fA03><fA05><s2>7766</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Pulsed Laser Deposition of Nanostructured Indium-Tin-Oxide Film</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Nanostructured thin films III : 4-5 August 2010, San Diego, California, United States</s1></fA09><fA11 i1="01" i2="1"><s1>THIAN KOK YONG</s1></fA11><fA11 i1="02" i2="1"><s1>CHEN HON NEE</s1></fA11><fA11 i1="03" i2="1"><s1>SEONG SHAN YAP</s1></fA11><fA11 i1="04" i2="1"><s1>WEE ONG SIEW</s1></fA11><fA11 i1="05" i2="1"><s1>SAFRAN (György)</s1></fA11><fA11 i1="06" i2="1"><s1>YOKE KIN YAP</s1></fA11><fA11 i1="07" i2="1"><s1>TECK YONG TOU</s1></fA11><fA12 i1="01" i2="1"><s1>MARTÍN-PALMA (Raúl J.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>JEN (Yi-Jun)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>LAKHTAKIA (Akhlesh)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Faculty of Engineering, Multimedia University</s1><s2>Cyberjaya, Selangor</s2><s3>MYS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Konkoly Thege út 29-33</s1><s2>29-33, Budapest XII</s2><s3>HUN</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Physics, Michigan Technological University, 1400 Townsend Drive</s1><s2>Houghton, MI, 49931-1295</s2><s3>USA</s3><sZ>3 aut.</sZ><sZ>6 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>SPIE</s1><s3>USA</s3><s9>org-cong.</s9></fA18><fA20><s2>776615.1-776615.6</s2></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA25 i1="01"><s1>SPIE</s1><s2>Bellingham, Wash.</s2></fA25><fA26 i1="01"><s0>978-0-8194-8262-4</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000174708170220</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>16 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0029782</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Effects of O<sub>2</sub>, N<sub>2</sub>, Ar and He on the formation of micro- and nanostructured indium tin oxide (ITO) thin films were investigated in pulsed Nd:YAG laser deposition on glass substrate. For O<sub>2</sub> and Ar, ITO resistivity of ≤ 4 × 10<sup>-4</sup> Ωcm and optical transmittance of > 90% were obtained with substrate temperature of 250 °C. For N<sub>2</sub> and He, low ITO resisitivity could be obtained but with poor optical transmittance. SEM images show nano-structured ITO thin films for all gases, where dense, larger and highly oriented, microcrystalline structures were obtained for deposition in O<sub>2</sub> and He, as revealed from the XRD lines. EDX results indicated the inclusion of Ar and N<sub>2</sub> at the expense of reduced tin (Sn) content. When the ITO films were applied for fabrication of organic light emitting devices (OLED), only those deposited in Ar and O<sub>2</sub> produced comparable performance to single-layer OLED fabricated on the commercial ITO.</s0></fC01><fC02 i1="01" i2="3"><s0>001B00A30C</s0></fC02><fC02 i1="02" i2="3"><s0>001B40B70</s0></fC02><fC02 i1="03" i2="3"><s0>001B60H55J</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A07Z</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Diode électroluminescente organique</s0><s5>11</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Organic light emitting diodes</s0><s5>11</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Microscopie électronique balayage</s0><s5>30</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Scanning electron microscopy</s0><s5>30</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>31</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>XRD</s0><s5>31</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Spectrométrie RX</s0><s5>32</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>X-ray spectroscopy</s0><s5>32</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Facteur transmission</s0><s5>41</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Transmittance</s0><s5>41</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Factor transmisión</s0><s5>41</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Dépôt laser pulsé</s0><s5>42</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Pulsed laser deposition</s0><s5>42</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Dépôt laser</s0><s5>43</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Laser deposition</s0><s5>43</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>44</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>44</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Spectre absorption</s0><s5>45</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Absorption spectra</s0><s5>45</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Température substrat</s0><s5>46</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Substrat 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i2="X" l="FRE"><s0>Microcristal</s0><s5>65</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Microcrystal</s0><s5>65</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Microcristal</s0><s5>65</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Spectre RX</s0><s5>66</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>X-ray spectra</s0><s5>66</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Spectrométrie dispersive</s0><s5>67</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Dispersive spectrometry</s0><s5>67</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Espectrometría dispersiva</s0><s5>67</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Inclusion</s0><s5>68</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Inclusions</s0><s5>68</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Diode électroluminescente</s0><s5>69</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Light emitting diodes</s0><s5>69</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>YAG</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="23" i2="3" 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i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>Nanostructured thin films</s1><s2>03</s2><s3>San Diego CA USA</s3><s4>2010</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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